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ROHM Semiconductors 1200V SiC MOSFETs Deliver Cost-Effective

SANTA CLARA, Calif., Sept. 19, 2013 /PRNewswire/ -- ROHM Semiconductor today announced the release of two new 80-milliohm 1200V SiC

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Teardown Report of STMicroelectronicss Inverter with SiC

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Costs for Production Workers in Manufacturing (SIC Basis)

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Cost Analysis of STMicroelectronicss STC30N1201200V SiC

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and Cost Analysis of STMicroelectronics‘s STC30N

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Electronics Can Slash $6,000 from Cost of Tesla Model S |

Wide bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance

ROHM Semiconductors 1200V SiC MOSFETs Deliver Cost-Effective

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Cree : Introduces Industrys First 1.7kV All-SiC Power Module

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Cost Analysis of STMicroelectronicss STC30N1201200V SiC

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High Efficiency SiC and GaN Power Devices | DigiKey

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