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An annealing object is prepared in which an absorbing film formed of a metal is formed on a surface of a wafer formed of silicon carbide into which


10. A silicon carbide single crystal wafer obtained by processing and single crystal wafer used for a substrate of a high frequency electronic

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(Nasdaq: CREE) announces that it signed a multi-year agreement to produce and supply its Wolfspeed® silicon carbide (SiC) wafers to STMicroelectronics

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