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2011118-Cree Inc.s commercial silicon carbide power MOSFET, the CMF20120D , provides blocking voltages up to 1200V with an on-state resistance (

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The Nature of SiC Motivation for Electronic Devices in SiC Overview of Issues Particular to SiC MOSFETs SiC Crystal Structure: Polytypism, Polarity and

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201656-Ideal for improving the performance of high power systems that traditionally have relied on IGBTs as power switches, explore STMicroelectron

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A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14

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a plurality of high side silicon carbide switches operatively coupled with a first DC bus connection, and a plurality of low side silicon carbide

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CREE Inc. - DURHAM, N.C. (ots) - Cree, Inc. (Nasdaq: CREE), the global leader in silicon carbide (SiC) semiconductors, has been

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Silicon carbide (SiC) devices have been gradually applied in power electronic for the characteristics of high voltage, high power densities, elevated

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2014416- Quickly prototype Wolfspeed MOSFET and IGBT power converter topologies up to Wolfspeeds CCS050M12CM2 silicon carbide six-pack (three ph

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