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Morphological Defects in Epitaxial CVD Silicon Carbide

J. A. Powell; D. J. Larkin, 1997: Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide Role of silicon dangling bonds in the elec

Reduction Synthesis of Ultra-Fine Silicon Carbide Powders

Johnson, J A.; Krantz, W B.; Hrenya, C M.; Weimer, A W., 2002: Analysis of the Rapid Carbothermal Reduction Synthesis of Ultra-Fine Silicon

Direct analysis of silicon carbide powder by total reflection

Three silicon carbide powders having different grain size distributions were m/V) and pH of 10 was dropped onto the Hydrophobic quartz carrier plate

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Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures

MANUFACTURING METHOD OF SILICON CARBIDE-BASED HONEYCOMB

A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a

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the microstructural development of liquid phase sintered silicon carbide ceramicspressureless-sintered SiC with plate-like grains using Al2O3-Y2O3additives

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Request PDF on ResearchGate | Hot-spots generation, exaggerated grain growth and mechanical performance of silicon carbide bulks consolidated by flash spark

Nanoparticles into Biomass‐Derived Silicon Oxycarbides

2019510-Compared to standard silicon-based semiconductors, silicon carbide (SiC) is significantly more energy-efficient and better able to handle th

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Comparing microwave-heated reactions in glass and silicon carbide vials suggests that heating effects alone are responsible for the benefits of

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Mechanical Properties and Flowability of Ultra Low Silicon Hyper- 3.4 Consideration 1: Mechanism of plate type carbide formation in

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| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures

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Comparison of Single- and Double-Trench UMOSFETs in 4H-SiC

Silicon carbide (SiC) trench MOSFETs, or UMOSFETs, generally exhibit lower specific on-resistance than planar DMOSFETs due to a more compact unit cell,

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US6214108B1 - Method of manufacturing silicon carbide single

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon