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(54) CDV METHOD OF AND REACTOR FOR SILICON CARBIDE MONOCRYSTAL GROWTH VMONOCRISTAL DE CARBIDE DE SILICIUM (84) Designated Contracting States: AT

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Process for producing silicon carbide single crystals

The process for producing silicon carbide single crystals of the present invention comprises a step for growing single crystals of silicon carbide on a

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Crystal Growth Technology || Silicon Carbide Crystals — Part

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METHOD OF MANUFACTURING SILICON CARBIDE CRYSTALS

A method of manufacturing silicon carbide crystals with a narrow PN junction in which during growth of such crystals by recrystallization and/or condensation

Silicon Carbide Crystals — Part I

Abstract The vapor transport growth of silicon carbide crystals involves induction heating, electromagnetic field, radiative and conductive heat transfer,

Growth and Characterization of Silicon Carbide Crystals

Silicon carbide is a semiconductor that is highly suitable for various high-temperature and high-power electronic technologies due to its large energy