transistor silicon carbide in switzerland

a C2M0025120D silicon carbide-based power MOSFET transistor

2012820-A voltage booster transistor with an optimal conducting path formed in widebandgap semiconductors like Silicon Carbide and Diamond, is provi

a thin film transistor having a silicon carbide buffer

A method of making a thin film transistor is described incorporating the steps of forming a gate electrode, a layer of insulating material, a layer of

Vertical JFET limited silicon carbide metal-oxide

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon

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2017730-MOS-bipolar devices has been the insulated gate bipolar transistor (IGBT). silicon carbide technology in the United States, Japan, and Sw

Fundamentals of Power Semiconductor Devices.pdf -max

201791-silicon carbide technology in the United States, Japan, and Switzerland–The output characteristi

Christine Slocumb - New London/Norwich, Connecticut Area |

A bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film (6) in contact

Semiconductor devices having varying electrode widths to

Semiconductor devices including a plurality of unit cells connected in parallel are provided. Each of the unit cells have a first electrode, a second

Vertical JFET limited silicon carbide metal-oxide

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon

BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

2006920-4945394 Bipolar junction transistor on silicon carbide 4979009 Heterojunction bipolar3. The bipolar semiconductor device (70) according t

Christine Slocumb - New London/Norwich, Connecticut Area |

A bipolar transistor comprises a collector region composed of an N type silicon, a base region composed of a P type silicon film (6) in contact

BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

2006920-4945394 Bipolar junction transistor on silicon carbide 4979009 Heterojunction bipolar3. The bipolar semiconductor device (70) according t

Semiconductor devices having varying electrode widths to

Semiconductor devices including a plurality of unit cells connected in parallel are provided. Each of the unit cells have a first electrode, a second