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dosimetric properties of silicon carbide (SiC) used in

2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in

Comparative study: Surface characteristics of CVD-SiC ground

Download Citation on ResearchGate | Comparative study: Surface characteristics of CVD-SiC ground with cast iron bond diamond wheel | Efficient precision

Rapid Sintering of Ceramics with Gradient Porous Structure by

In this study, thermal radiation was employed for sintering silicon carbide foams that achieved a gradient porous structure. The simultaneous use of

Rapid Sintering of Ceramics with Gradient Porous Structure by

In this study, thermal radiation was employed for sintering silicon carbide foams that achieved a gradient porous structure. The simultaneous use of

dye adsorptions onto activated carbon and silicon carbide

Ghasemian, E.; Palizban, Z., 2016: Comparisons of azo dye adsorptions onto activated carbon and silicon carbide nanoparticles loaded on activated carbon

oxygen activation by solid iron doped silicon carbide

Li, H.; Chen, J.; Hou, H.; Pan, H.; Ma, X.; Yang, J.; Wang, L.; Crittenden, J.C., 2017: Sustained molecular oxygen activation by

autoclave made of semiconducting silicon carbide ceramic

Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

Tribological Characterization of SiC and B4C Manufactured by

Request PDF on ResearchGate | Tribological Characterization of SiC and B4C Manufactured by Plasma Pressure Compaction | The objective of the present study

US6214108B1 - Method of manufacturing silicon carbide single

Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

Simplified Silicon Carbide MOSFET Model Based on Neural Network

Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has become the core device of power-switching converters with its excellent

waste printed circuit boards to prepare silicon carbide

2019328-A resource-utilization strategy of the waste PCBs was developed: preparation of high value-added silicon carbide (SiC) nanoparticles using t

Buy PDF - Brass-matrix silicon carbide whisker composites

P. Yih; D.D.L. Chung, 1999: Brass-matrix silicon carbide whisker composites prepared by powder metallurgy Silicone Rubber Composites by Introducing Montm

of Ukraine Kiev Polytechnic Institute, Kyiv and other places

V. K. Genkinas 7 research works with 10 citations and 41 reads, including: Radiation polarization of silicon carbide p-n-structures, operating in

T.M. Parrills research works | Northwestern University, IL (

T.M. Parrills 8 research works with 260 citations and 39 reads, including: Effects of initial silicon carbide surface composition on room temperature Au

High-temperature behavior of C f/SiOC composites in inert

Three-dimensional carbon fiber reinforced silicon oxycarbide (3D Cf/SiOC) composites were fabricated through precursor infiltration and pyrolysis processing

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On the nanoscale behaviour of single-wall C, BN and SiC

The paper presents a numerical study of defect-free single-wall carbon, boron nitride and silicon carbide armchair and zigzag nanotubes, through a simple

Cree to Invest US$1 Billion to Expand Silicon Carbide Capacity

@ improved granular abrasive material (22) comprises silicon carbide particles (23) at least partially coated with an integral, durable surface layer (24)

adsorption on defective and non-defective silicon carbide

Molani, F; Jalili, S; Schofield, J, 2015: A computational study of platinum adsorption on defective and non-defective silicon carbide nanotubes of pla

Full-Text | Demonstration of a Robust All-Silicon-Carbide

record of physical robustness, chemical inertness, and a great degree of biological tolerance: crystalline silicon carbide (SiC) [25,26,27,28,29,30,31]

and mechanical properties of self-reinforced silicon carbide

Young-Wook Kim; Wonjoong Kim; Duk-Ho Cho, 1997: Effect of additive amount on microstructure and mechanical properties of self-reinforced silicon carbide

Fundamentals of Silicon Carbide Technology eBook by Tsunenobu

Read Fundamentals of Silicon Carbide Technology Growth, Characterization, Devices and Applications by Tsunenobu Kimoto available from Rakuten Kobo. A

Molecular pore-network model for nanoporous materials. I:

Request PDF on ResearchGate | Molecular pore-network model for nanoporous materials. I: Application to adsorption in silicon-carbide membranes | We develop

on the combined effects of titania and silicon carbide on

Studies on the combined effects of titania and silicon carbide on theMathematical formulae have been encoded as MathML and are displayed in

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SCTH35N65G2V-7AG - Automotive-grade silicon carbide Power

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Direct Observation of Transition from Solid-State to Molecular-Like Optical Properties in Ultrasmall Silicon Carbide Nanoparticles

The Impact of Trivedi Effect on Silicon Carbide | Pearltrees

Abstract Silicon carbide (SiC) is a well-known ceramic due to its excellent spectral absorbance and thermo-mechanical properties. The wide band gap, high

of Nitric Oxide on Asbestos and Silicon Carbide Fibers

Per Leanderson, V Lagesson and Christer Tagesson, 1997: Supplement 5: Particle Toxicity || Demonstration of Nitric Oxide on Asbestos and Silicon Carbide