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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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201243-A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separati

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The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)

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This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with an introduction into the wide bandgap (WBG) materials

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Method of producing high quality silicon carbide crystal in a

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a

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pA silicon carbide wafer is disclosed comprising: a single polytype single crystal; a diameter greater than 75 millimeters; a resistivity greater than

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The American conglomerates discovered the advantages of moving parts of their plastics and polymers and modern composites, such as silicon carbide reinforc

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The American conglomerates discovered the advantages of moving parts of their plastics and polymers and modern composites, such as silicon carbide reinforc

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