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and wear behaviour of silicon nitride/silicon carbide

P. J. Blau, 1992: Effects of surface preparation on the friction and wear behaviour of silicon nitride/silicon carbide sliding pairs coatings sliding ag

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matrix composites with unidirectional silicon carbide

Pin Go; Changmo Sung; J. J. Kostetsky; T. Vasilos, 2002: Silicon nitride matrix composites with unidirectional silicon carbide whisker reinforcement E

gold atom implantation into silicon carbide | Request PDF

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Silicon Carbide Semiconductor Device with Trench Gate

A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate

of SiC (Silicon Carbide) Whiskers in RSP aluminum Powders

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Cree to Invest US$1 Billion to Expand Silicon Carbide Capacity

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research works | Rutgers, The State University of New

machining conditions which maximize strength and (lapping) experiments performed on aluminum nitridesilicon carbide (SiC) as compared to sintered

between varying silicon carbide and hardness values in

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Some observations in grinding SiC and silicon carbide ceramic

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Speciation of aluminium in silicon carbide by electrothermal

(ETV-ICP-AES) method was developed for rapid determination of binder and lattice phase aluminium in liquid-phase sintered silicon carbide (LPS-SiC)

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Understanding the Chemistry in Silicon Carbide Chemical Vapor

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