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Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon

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growth and mechanical performance of silicon carbide bulks

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Electronics | Free Full-Text | Towards Silicon Carbide VLSI

A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

Interacting with C-terminated Surface of Silicon Carbide-

Time-dependent proportional limit stress of carbon fiber-reinforced silicon carbide ceramic-matrix composites considering interface oxidation

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a metal contact layer on silicon carbide and semiconductor

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Silicon Carbide (SiC) power modules capable of supporting applications in the Methodology for the volume minimization in non-isolated SiC based PV

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qudit modes in silicon carbide at room temperature“bright” centers), and does not require radioSuch centers are characterized by spin-dependent

Properties in Ultrasmall Silicon Carbide Nanoparticles -

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| Friedrich-Alexander-University of Erlangen-Nürnberg,

Gregor Pobegens 58 research works with 540 citations and 1,717 reads, including: An adapted method for analyzing 4H silicon carbide metal-oxide-

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK

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Silicon Carbide Market 2018 : Global Industry Growth,

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Size-dependent Effects in Silicon Carbide and Diamond

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autoclave made of semiconducting silicon carbide ceramic

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of defects in silicon carbide homoepitaxial wafer -

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