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- Method for growing single crystal of silicon carbide -

In feeding a silicon carbide-forming gas generated by a method of heat-subliming silicon carbide or the like to the surface of a seed crystal (2) so

contact mobility measurements of graphene on silicon carbide

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dosimetric properties of silicon carbide (SiC) used in

2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in

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of silicon carbide in a continuous mode without the use of vacuum media. The final calcination was in this case performed at 400 ºC to form


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Silicon carbide: Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon

GaZnO as a Transparent Electrode to Silicon Carbide

x1021cm-3) values are observed for the GaZnO films deposited at 400 oC GaZnO as a Transparent Electrode to Silicon Carbide, Materials Science

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