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- Method for growing single crystal of silicon carbide -

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dosimetric properties of silicon carbide (SiC) used in

2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in

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of silicon carbide in a continuous mode without the use of vacuum media. The final calcination was in this case performed at 400 ºC to form

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Silicon carbide: Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon

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