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controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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Ellipsometric study of the complex optical constants of a CsP

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Fast Fracture Properties of Thin Interphase Silicon Carbide

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dosimetric properties of silicon carbide (SiC) used in

2019329-Silicon Carbide (SiC), also known as carborundum, has been found to be widely useful as a substrate and wide band gap semiconductor in

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and optical constants of inhomogeneous amorphous silicon

of surface roughness and optical constants of inhomogeneous amorphous silicon Inhomogeneities in thin films have a large influence on the optical transmiss

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The Handbook on Optical Constants of Metals ()

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electronic structure of two-dimensional silicon carbide |

Two-dimensional silicon carbide (2D-SiC) has attracted incredible research attention recently because of its wide bandgap and high exciton binding

Mechanical Properties of Cubic Silicon Carbide after Neutron

Mechanical Properties of Cubic Silicon Carbide after Neutron Irradiation at Elevated Temperatures(Received 16 April 2004; accepted 30 January 2005)Published

Silicon carbide: A playground for ID-modulation electronics

separation of free electrons and holes, as well as to optical nonlinearity.International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM

Optical constants of wurtzite ZnS thin films determined by

Please log in to see this content. You have noSilicon quantum wire array fabrication by electrochemicalScitation: Optical constants of wurtzite ZnS thi

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Refractive index of SCHOTT - SF (Dense flint) - N-SF11

Optical constants of SCHOTT - SF (Dense flint)N-SF11 Wavelength: µm (0.37 – 2.5) Derived optical constants n k logX logY eV

Like Optical Properties in Ultrasmall Silicon Carbide

(PL) and steady-state PL excitation (PLE) measurements to study the size dependent optical properties of ultrasmall silicon carbide (SiC)

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zone-folded acoustic phonons in 4H and 6H silicon carbide

investigate the dielectric properties of the 4H and 6H polytypes of silicon carbide in the 0.1-19 THz range, below the fundamental transverse-optical

[][]Handbook of Optical Constants of Solids I Pal.pdf

A complete set of the optical constants are presented in tabular and graphical forms over the entire photon-energy range. They are: the complex dielectric

Approach for Determining Equivalent Optical Constants of

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- Atmosphere effects in the processing of silicon carbide

P. Colombo; T. E. Paulson; C. G. Pantano, 1994: Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatin

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Y and Huang, QS and Jia, YP and Wang, G and Guo, LW and Chen, XL (2012) Growth and properties of wide bandgap semiconductor silicon carbide

OSA | Optical Constants of Water in the 200-nm to 200-μm

Querry, Optical Constants of Water in the 200-nm to 200-μm Wavelength Region, Appl. Opt. 12, 555-563 (1973) Export Citation BibTex Endnote

Grinding of Chemical Vapor Deposited Silicon Carbide for X

Y. Namba; H. Kobayashi; H. Suzuki; K. Yamashita; N. Taniguchi, 1999: Ultraprecision Surface Grinding of Chemical Vapor Deposited Silicon Carbide for X

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Mechanical Properties and Flowability of Ultra Low Silicon Hyper- Figure 13 shows the mechanism of plate type carbide formation in the

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Fowler - Nordheim stress of n-type silicon carbide metal-

Bano, E; Ouisse, T; Leonhard, C; Gölz, A; Kamienski, E G Stein von, 1997: High-field Fowler - Nordheim stress of n-type silicon carbide

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