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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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201949-A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defi

controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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Silicon carbide films were deposited on silicon substrates maintained at Pulsed Laser Deposition (PLD) employing an excimer (XeCl) or a ruby laser

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Get PDF - Characteristics of silicon carbide detectors

Gurov, Y. B.; Rozov, S. V.; Sandukovsky, V. G.; Yakushev, E. A.; Hrubcin, L.; Zat’ko, B., 2015: Characteristics of silicon carbide

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Epitaxial growth is a potential production process for the new material graphene, where it is grown on silicon carbide (SiC) wafers at high


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Arshad, M.; Zafar, Y.; Asad, S., 2013: Silicon carbide whisker-mediated transformation of cotton (Gossypium hirsutum L.) Due to being a multipurpo